Transmission Electron Microscopy Studies on InGaN/GaN Quantum-well Structures under Different Overgrowth Conditions in Light-emitting Diodes
碩士 === 國立臺灣大學 === 光電工程學研究所 === 99 === The objective of this research is to use the methods of high resolution transmission electron microscope (HRTEM) and strain-state analysis (SSA) to compare the nanostructures of InGaN/GaN quantum wells (QWs) under different growth conditions. We find that in a h...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75267310224387710397 |