Growths of III-V Nitride Semiconductors with the Techniques of Metalorganic Vapor Phase Deposition and Molecular Beam Epitaxy
博士 === 國立臺灣大學 === 光電工程學研究所 === 99 === In this dissertation, first pit-free a-plane GaN (11-20) growth on r-plane sapphire (1-102) substrate with metalorganic chemical vapor deposition (MOCVD) is reported. We use the flow-rate modulation epitaxy (FME) technique to improve the crystal quality of an a-...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43946718946711784153 |