The Polycrystalline Germanium Film on Insulator by Liquid Phase Epitaxy on SOI Platform
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In recent years, the germanium-on-insulator (GOI) technology has been developed to provide a good solution to overcome the physical limits of silicon. Several GOI material fabrication methods has been proposed and demonstrated, such as wafer bonding, zone meltin...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85384588478234166271 |