Selective Epitaxy of Germanium and Nanoscale Channel Structure Fabrication for Germanium on Insulator
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === As the CMOS device scales down, the high mobility devices and optical interconnects become the critical solutions to extend the system performance. Ge is an enabling material for these applications because of its high carrier mobility and strong optical absorpti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08103235869019914104 |