The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === Traditional silicon technology is mature and widespread in application nowadays. Therefore, silicon is the main material in semiconductor industry. But by the limit of physics, silicon technology will finally face that it cannot reduce its scale in order to purs...
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ndltd-TW-099NTU054280462015-10-16T04:02:49Z http://ndltd.ncl.edu.tw/handle/34838492259714620058 The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates 基於絕緣層上覆矽基板及純矽基板製作絕緣層上覆多晶鍺之研究 Chung-Wei Lin 林忠偉 碩士 國立臺灣大學 電子工程學研究所 99 Traditional silicon technology is mature and widespread in application nowadays. Therefore, silicon is the main material in semiconductor industry. But by the limit of physics, silicon technology will finally face that it cannot reduce its scale in order to pursue high speed and low cost. Consequently, germanium as group IV as silicon is developed in this thesis. Its advantages are high mobility and larger absorption at communication wavelength than silicon. As a result, it can be combined with traditional silicon technology in order to develop more high-speed devices. In this thesis, we developed poly-germanium on insulator (GOI) by SOI and Si substrates using a low-cost liquid phase epitaxy (LPE) method. Its principle is to anneal Ge above its melting point, and cool it rapidly in order to achieve recrystallization. We have acquired 300-nm-thick and 100-nm-thick poly-GOI respectively by two different methods in this study. Their patterns were 5μm×5μm and 10μm×10μm square arrays. In addition, we have also acquired 300-nm-thick strip GOI. By the method, it is expected to be integrated to Si substrates for new devices, such as photodetectors. Therefore, this investigation is one of the important development trends for semiconductor industry. Yu-Hsuan Kuo 郭宇軒 2011 學位論文 ; thesis 55 en_US |
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碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === Traditional silicon technology is mature and widespread in application nowadays. Therefore, silicon is the main material in semiconductor industry. But by the limit of physics, silicon technology will finally face that it cannot reduce its scale in order to pursue high speed and low cost. Consequently, germanium as group IV as silicon is developed in this thesis. Its advantages are high mobility and larger absorption at communication wavelength than silicon. As a result, it can be combined with traditional silicon technology in order to develop more high-speed devices.
In this thesis, we developed poly-germanium on insulator (GOI) by SOI and Si substrates using a low-cost liquid phase epitaxy (LPE) method. Its principle is to anneal Ge above its melting point, and cool it rapidly in order to achieve recrystallization.
We have acquired 300-nm-thick and 100-nm-thick poly-GOI respectively by two different methods in this study. Their patterns were 5μm×5μm and 10μm×10μm square arrays. In addition, we have also acquired 300-nm-thick strip GOI. By the method, it is expected to be integrated to Si substrates for new devices, such as photodetectors. Therefore, this investigation is one of the important development trends for semiconductor industry.
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Yu-Hsuan Kuo |
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Yu-Hsuan Kuo Chung-Wei Lin 林忠偉 |
author |
Chung-Wei Lin 林忠偉 |
spellingShingle |
Chung-Wei Lin 林忠偉 The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates |
author_sort |
Chung-Wei Lin |
title |
The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates |
title_short |
The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates |
title_full |
The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates |
title_fullStr |
The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates |
title_full_unstemmed |
The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates |
title_sort |
investigation of polycrystalline germanium on insulator based on soi and si substrates |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/34838492259714620058 |
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