Analysis of Material Property and Reliability Testing of Thin-Film Transistor of Amorphous Indium-Gallium-Zinc-Oxide
碩士 === 國立臺灣大學 === 電子工程學研究所 === 99 === In the past years, there has been increasing interest in using amorphous indium gallium zinc oxide(a-IGZO) to the channel material of the thin-film transistors (TFTs) for Active Matrix Organic Light Emitting Diode (AMOLED). As compared to hydrogenated amorphous...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83775202333482284085 |