Fabrication of Ternary InxGa1−xN Nanowire Arrays on Si Substrates by MOCVD technique
碩士 === 國立臺灣科技大學 === 化學工程系 === 99 === We demonstrated the catalytic growth of InxGa1−xN nanowire (NW) arrays (0.06≦x≦0.17) on silicon substrate using metal-organic chemical vapor deposition technique. X-ray diffraction characterization confirmed that the InxGa1−xN NWs are single phase wurtzite struct...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/t9b836 |