Preparation of Silicon Heterojunction solar Cells by VHF-PECVD System

• Main Authors: Shr-Han Feng, 馮詩翰
• Other Authors: Lu-Sheng Hong
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/d8hmx2

碩士 === 國立臺灣科技大學 === 化學工程系 === 99 === In this thesis, we fabricated the intrinsic hydrogenated amorphous silicon/monocrystalline silicon (a-Si:H/c-Si) symmetrical heterostructure by PECVD . Emphasis was placed upon comparing the passivation property of the intrinsic a-Si:H layers. Also, the p-type hydrogenated microcrystalline silicon (μc-Si:H) films were prepared using various plasma excitation frequencies, and deposited on various heterogeneous materials to simulate the grow behavior in the real Silicon heterojunction solar cell fabrication. In the first part, the result showed that the films prepared by VHF-PECVD exhibit much better interfacial passivation property compare with those prepared by the conventional RF-PECVD. In addition, the deposition behavior of p-type μc-Si:H thin layer showed dependence on the type of substrates used. For example, a p-type μc-Si:H layer with a dark conductivity of >1×10-4 S/cm can be achieved. Finally, we used connected PECVDs reactors to fabricate silicon heterojunction solar cells. Up to date, the best cell was characterize by open-circuit voltage(Voc) = 633 mV, short-circuit current density(Jsc) = 33 mA/cm2 and fill factor(FF) = 65.2 %, respectively. The optoelectronic conversion efficiency of 13.6 % was achieved.