The study of transparent conducting properties of Al-doped ZnO films by using a magnetron sputtering method

• Main Authors: Chung-Yu Li, 李忠諭
• Other Authors: Yu-Min Hu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/01725014131474254799

碩士 === 國立高雄大學 === 應用物理學系碩士班 === 99 === In this thesis, we report effect of change to a different process by a fixed AZO target on the crystal structural, surface morphological, optical, chemical composition and electrical. All of the film samples were deposited using the magnetron sputtering method. The aim of this work is to examine the possibility, as well as the origin of electrical in AZO films. All of the AZO films are highly c-axis-oriented wurtzite structures and high visible transmittance ( > 80% at = 400 - 700 nm). The option bandgap estimated by the Tauc’s plot. Changes in the optical band gap of AZO films is not entirely consistent with the carrier concentration. This result corresponds with the Burstein-Moss effect and In-plane stress. From Hall-effect measurement results by PhotoLuminance and X-ray photoelectron spectroscopy compared with each other, carrier concentration and the number of defects the relationship between.