| Summary: | 碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 99 === With the needs of industry, the reserch of amorphous Si transform to polycrystalline Si had been wildly researched. This study is about Aluminum induce crystallization. Al and Si thin films were prepared by DC and radio frequency (RF) magnetron sputtering method, and the film were treated by annealing. And the parameters of experiment are annealing temperature ,annealing time, the Al/Si ratio of thickness, different method of annealing. The structure and morphology were characterized by optical
microscope(OM),field-emission scanning electron microscope (FE-SEM),glan
cing incident angle X-ray diffractometer (GIDXRD), Raman spectrometry, UV-Visible spectrometry measurement was done to analyze the optical transmittance.
Experimental results show that the annealing temperature is close to Al/Si eutectic temperature (577 oC) the more than obvious effects of crystallization could be observed. The percentage of the precipitation area of poly-Si will increase with the annealing time from 1.3 % to 58 % .The transmittance of light will increase with the annealing time increase from 3 % to 7 %.
It could observe that the thickness of different Al/Si layer would affect the crystallinity in this study. When the ratio of Al/Si thickness is 1:4, the result of crystallinity would be better in a short period time. When the ratio is 1:4, the intensity of the peaks are less than other ratio in the result of XRD. The ratio of 1:1 would benefit to nucleate, but insufficient Si would limit the size of grains. Therefore, it would be optimum in this study when the ratio is 1:2. In this study, use two-stage annealing with RTP (rapid thermal process) would be better than one-stage annealing.
Keywords: Aluminum induced crystallization, Two-stage annealing, The configuration of the Al/Si thickness
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