Growth of p-type ZnO on GaAs Sbstrate Using Rapid Thermal Annealing
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 99 === Zinc oxide (ZnO) is one of II-VI compound semiconductor with a wide band gap of 3.37 eV at room temperature and a large excition binding energy of 60meV, which makes it be an attractive material recently, especially in the application of blue and ultraviolet...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m8xkzw |