Properties of Ultrathin Ru/TaSiC Bi-Layer Diffusion Barrier for Cu Interconnects
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 99 === International Technology Roadmap for Semiconductors (ITRS) indicates that the barrier thickness for Cu metallization should be reduced to 2 nm in 2016. The barrier should have low resistivity and high thermal stability when reducing the thickness, and ca...
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r8xu2e |