Properties of Ultrathin Ru/TaSiC Bi-Layer Diffusion Barrier for Cu Interconnects

Properties of Ultrathin Ru/TaSiC Bi-Layer Diffusion Barrier for Cu Interconnects

碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 99 === International Technology Roadmap for Semiconductors (ITRS) indicates that the barrier thickness for Cu metallization should be reduced to 2 nm in 2016. The barrier should have low resistivity and high thermal stability when reducing the thickness, and ca...

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Bibliographic Details
Main Authors:	Meng-Shuo Huang, 黃孟碩
Other Authors:	方昭訓
Format:	Others
Language:	zh-TW
Published:	2011
Online Access:	http://ndltd.ncl.edu.tw/handle/r8xu2e

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