| Summary: | 碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 99 === In this study, ZnO thin films were grown on silicon substrate by chemical vapor deposition method. A three-zone tube furnace was used to produce of ZnO thin film at high temperature fixed deposition time, and gas flow rate under different temperature (500 ℃、600 ℃、700 ℃), and growth pressure (1torr、50torr、100torr、150torr) . The different of ZnO thin film growth characteristics was studied, crystalline structure, surface morphology, roughness, and photoluminescence of the ZnO films were investigated by equipments such as field emission scanning electron microscopy, X-ray Diffraction, atomic force microscopy, and photoluminescence spectrometer. After the experiment, the results were analyzed to obtain the optimal growth pressure and temperature. Also through the optimal process parameters it was able to produce the best characteristics out of ZnO thin films. These optimal process parameters can be provided as a reference for producing solar cell components or electronic sensor components in the future.
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