A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method

碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 99 === In this study, ZnO thin films were grown on silicon substrate by chemical vapor deposition method. A three-zone tube furnace was used to produce of ZnO thin film at high temperature fixed deposition time, and gas flow rate under different temperature (500 ℃、...

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Main Authors: Chin-Kuei Chang, 張晉魁
Other Authors: Feng-Tsai Weng
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/39mm6c
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spelling ndltd-TW-099NYPI54900332019-10-18T05:21:01Z http://ndltd.ncl.edu.tw/handle/39mm6c A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method 應用化學氣相沉積法磊晶成長氧化鋅薄膜之特性研究 Chin-Kuei Chang 張晉魁 碩士 國立虎尾科技大學 機械與機電工程研究所 99 In this study, ZnO thin films were grown on silicon substrate by chemical vapor deposition method. A three-zone tube furnace was used to produce of ZnO thin film at high temperature fixed deposition time, and gas flow rate under different temperature (500 ℃、600 ℃、700 ℃), and growth pressure (1torr、50torr、100torr、150torr) . The different of ZnO thin film growth characteristics was studied, crystalline structure, surface morphology, roughness, and photoluminescence of the ZnO films were investigated by equipments such as field emission scanning electron microscopy, X-ray Diffraction, atomic force microscopy, and photoluminescence spectrometer. After the experiment, the results were analyzed to obtain the optimal growth pressure and temperature. Also through the optimal process parameters it was able to produce the best characteristics out of ZnO thin films. These optimal process parameters can be provided as a reference for producing solar cell components or electronic sensor components in the future. Feng-Tsai Weng 翁豊在 2011 學位論文 ; thesis 66 zh-TW
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description 碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 99 === In this study, ZnO thin films were grown on silicon substrate by chemical vapor deposition method. A three-zone tube furnace was used to produce of ZnO thin film at high temperature fixed deposition time, and gas flow rate under different temperature (500 ℃、600 ℃、700 ℃), and growth pressure (1torr、50torr、100torr、150torr) . The different of ZnO thin film growth characteristics was studied, crystalline structure, surface morphology, roughness, and photoluminescence of the ZnO films were investigated by equipments such as field emission scanning electron microscopy, X-ray Diffraction, atomic force microscopy, and photoluminescence spectrometer. After the experiment, the results were analyzed to obtain the optimal growth pressure and temperature. Also through the optimal process parameters it was able to produce the best characteristics out of ZnO thin films. These optimal process parameters can be provided as a reference for producing solar cell components or electronic sensor components in the future.
author2 Feng-Tsai Weng
author_facet Feng-Tsai Weng
Chin-Kuei Chang
張晉魁
author Chin-Kuei Chang
張晉魁
spellingShingle Chin-Kuei Chang
張晉魁
A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method
author_sort Chin-Kuei Chang
title A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method
title_short A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method
title_full A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method
title_fullStr A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method
title_full_unstemmed A Study of The Characteristics of ZnO Thin Films Using Chemical Vapor Deposition Method
title_sort study of the characteristics of zno thin films using chemical vapor deposition method
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/39mm6c
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