A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film
碩士 === 國立臺北科技大學 === 化學工程研究所 === 99 === This paper studied two major topics. The first part discuss resistivity cause of tungsten chemical vapor deposition plug for semiconductor; the other is that can be employed the method of equipment parameter to retard or inhibit higher resistivity. The follow...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/272xp4 |