A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film
碩士 === 國立臺北科技大學 === 化學工程研究所 === 99 === This paper studied two major topics. The first part discuss resistivity cause of tungsten chemical vapor deposition plug for semiconductor; the other is that can be employed the method of equipment parameter to retard or inhibit higher resistivity. The follow...
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ndltd-TW-099TIT050630882019-05-15T20:42:29Z http://ndltd.ncl.edu.tw/handle/272xp4 A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film 金屬鎢化學氣相沉積薄膜電阻率及填洞能力之研究 Che-Hsien Liao 廖哲賢 碩士 國立臺北科技大學 化學工程研究所 99 This paper studied two major topics. The first part discuss resistivity cause of tungsten chemical vapor deposition plug for semiconductor; the other is that can be employed the method of equipment parameter to retard or inhibit higher resistivity. The following is the first major topic. We learned that higher resistivity plug is caused by poor design with tungsten components reduce the line width is narrowed, the flow through metal wires with high current density changes, while the role of atoms in the high current density produced under the migration, the phenomenon known as electro migration, thus leading to migration of tungsten ions generated higher resistivity. The following is the second major topic. We found tungsten chemical vapor deposition plug after gap fill process, the tungsten metal corrosion occurs, and the corrosion area will be expanded, so we have to adjust parameters by equipment reaction gas flow, temperature, and environmental conditions to solve the tungsten wire gap fill problems. Then, it used measuring instruments optical microscope, focused ion beam (FIB) and scanning electron microscope (SEM) to understand the causes of tungsten gap fill problems, and observe the changes in the hole. Wen-Jeng Guo 郭文正 2011 學位論文 ; thesis 78 zh-TW |
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碩士 === 國立臺北科技大學 === 化學工程研究所 === 99 === This paper studied two major topics. The first part discuss resistivity cause of tungsten chemical vapor deposition plug for semiconductor; the other is that can be employed the method of equipment parameter to retard or inhibit higher resistivity.
The following is the first major topic. We learned that higher resistivity plug is caused by poor design with tungsten components reduce the line width is narrowed, the flow through metal wires with high current density changes, while the role of atoms in the high current density produced under the migration, the phenomenon known as electro migration, thus leading to migration of tungsten ions generated higher resistivity.
The following is the second major topic. We found tungsten chemical vapor deposition plug after gap fill process, the tungsten metal corrosion occurs, and the corrosion area will be expanded, so we have to adjust parameters by equipment reaction gas flow, temperature, and environmental conditions to solve the tungsten wire gap fill problems. Then, it used measuring instruments optical microscope, focused ion beam (FIB) and scanning electron microscope (SEM) to understand the causes of tungsten gap fill problems, and observe the changes in the hole.
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author2 |
Wen-Jeng Guo |
author_facet |
Wen-Jeng Guo Che-Hsien Liao 廖哲賢 |
author |
Che-Hsien Liao 廖哲賢 |
spellingShingle |
Che-Hsien Liao 廖哲賢 A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film |
author_sort |
Che-Hsien Liao |
title |
A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film |
title_short |
A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film |
title_full |
A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film |
title_fullStr |
A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film |
title_full_unstemmed |
A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film |
title_sort |
study on the resistivity and gap filling capability from tungsten chemical vapor deposition film |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/272xp4 |
work_keys_str_mv |
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