A Study on the Resistivity and Gap Filling Capability from Tungsten Chemical Vapor Deposition Film

• Main Authors: Che-Hsien Liao, 廖哲賢
• Other Authors: Wen-Jeng Guo
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/272xp4

碩士 === 國立臺北科技大學 === 化學工程研究所 === 99 === This paper studied two major topics. The first part discuss resistivity cause of tungsten chemical vapor deposition plug for semiconductor; the other is that can be employed the method of equipment parameter to retard or inhibit higher resistivity. The following is the first major topic. We learned that higher resistivity plug is caused by poor design with tungsten components reduce the line width is narrowed, the flow through metal wires with high current density changes, while the role of atoms in the high current density produced under the migration, the phenomenon known as electro migration, thus leading to migration of tungsten ions generated higher resistivity. The following is the second major topic. We found tungsten chemical vapor deposition plug after gap fill process, the tungsten metal corrosion occurs, and the corrosion area will be expanded, so we have to adjust parameters by equipment reaction gas flow, temperature, and environmental conditions to solve the tungsten wire gap fill problems. Then, it used measuring instruments optical microscope, focused ion beam (FIB) and scanning electron microscope (SEM) to understand the causes of tungsten gap fill problems, and observe the changes in the hole.