Exploitation helical AlN layer prepared by oblique rotation of deposition
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 99 === AlN is the direct band gap semiconductor material with high chemical stability and high energy gap (about 6.2 eV). AlN and GaN material the lattice are a = 3.112 Å and a = 3.189 Å. Between the two materials the lattice mismatch is about 2.4 % and has good the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/w83k7u |