Using Thermal Oxidation Insulator Layer to Enhance p-InP Schottky Solar Cell Performance
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 99 === This study is to find the best conditions of the growth temperature and time of thermal oxidation insulator layer for metal-insulator-semiconductor (MIS) to improve the indium phosphide (InP) Schottky solar cell performance. The advantages of MIS solar cells u...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8wc83z |