Characteristics of pure Hf target and HfO2 thin films
碩士 === 國立臺北科技大學 === 資源工程研究所 === 99 === The evolution of IC manufacturing process and the device size will be getting smaller. It makes the SiO2 of gate becoming thinner, while the direct tunneling leakage current increase. The leakage current increase result the device which has the leakage current...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bkg33w |