Performance and Hot-Carrier Effect of Strained nMOSFETs with Tensile and Compressive CESL Stressors
碩士 === 國立臺北科技大學 === 機電整合研究所 === 99 === CESL stressor, a kind of uniaxial strained-Si technology, is to deposit SiN layer on the MOSFETs. The device performance can be improved due to the mechanical strain produced by the SiN capping layer. From previous literatures, CESL stressor with biaxial strain...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d7vpuv |