A Study of HfOxNy Thin Films by Reactive Radio Frequency Magnetron Sputtering
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 99 === In this study, HfOxNy high-dielectric thin films with a thickness of 5nm were deposited on p-Si(100) substrate by reactive RF magnetron sputtering at room temperature. Before the HfOxNy thin films were deposited, the Si substrate were treated by the nitrogen...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95077607527928816655 |