An Investigation on the Properties of Ultra-Thin High-k HfSiO(N) Film as Gate Dielectric
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 99 === HfSiO(N) thin films are deposited by RF magnetic controlled sputtering system on p-type Si-(100) substrate with the sputtering system re-sputtering function of before and after the HfSiO(N) thin films deposited, the Pre-N2 plasma treatment could form a barrie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03242949769502694439 |