Type-II Vertically Aligned Quantum Dot Solar Cells
碩士 === 元智大學 === 光電工程研究所 === 99 === Abstract In this thesis, we study the InAs quantum dots (QD) which are grown on GaAs substrate. The thickness is designed as a 10nm of capping layer for the formation of vertical quantum dots. Quantum dots cover different antimony (Sb) compositions of capping layer...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15652921570779666450 |