The effect of magnesium doping concentration on the characteristics of p-type GaN films grown by metal-organic chemical-vapor deposition
碩士 === 元智大學 === 先進能源研究所 === 99 === The purpose of the investigation is Mg-doped p-GaN films with various Mg flow rates were grown on a sapphire substrate by metal-organic chemical-vapor deposition under low-pressure growth conditions. A high Mg activation efficiency of 2% was achieved by an optimiz...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99117974875247692599 |