Characterisics of efficiency droop in InGaN-based LEDs with various barrier thickness
碩士 === 長庚大學 === 光電工程研究所 === 100 === In this thesis, we grow three InGaN/GaN multiple quantum wells (MQWs) by different barrier thickness on c-plane sapphire substrates. Investigating efficiency droop by the localized state and the hole injection . First we used the X-ray diffraction (XRD) and recipr...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05699316452564370934 |