Effect of Oxygen Plasma Treatment on the Electrical Characteristics of HfO2 Capacitors
碩士 === 長庚大學 === 電子工程學系 === 100 === In this work, we utilized high-k hafnium dioxide of 80nm as the insulator layer of metal-insulator-metal capacitor. After HfO2 deposition by magnetron sputtering, O2 plasma treatment with different rf power were applied on surface of HfO2 thin films in order to red...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78493948959667110802 |