Nonvolatile Memories Using Nanoscale IrOx Metal Nanocrystals

博士 === 長庚大學 === 電子工程學系 === 100 === As the traditional floating gate memory approaching their limitations, new materials and structures are necessary for the further development. The impact of iridium-oxide (IrOx) nanolayer thickness on the tunneling oxide and memory performance of IrOx metal nanocry...

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Bibliographic Details
Main Author: Writam Banerjee
Other Authors: S. Maikap
Format: Others
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/44892015152393315374