Design of S-band High Power Microwave Switch and V-band Frequency Tripler
碩士 === 長庚大學 === 電子工程學系 === 100 === A high power switch in S-band is proposed in this thesis. First the SPDT switch was designed in 2.45 GHz, S-band by use of GaN component with high carrier density (>1013 cm-2), high electron mobility (>2500 cm^(-2)/V-s) and high breakdown voltage (> 100V),...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15800862511354594476 |