DRAM Device Reliability Improvement by Rapid Thermal Anneal and Fluorine Passivation
碩士 === 長庚大學 === 電子工程學系 === 100 === Dynamic random access memory is an important element in computer field. In current trending of market demand, not only standard DRAM, but also mobile DRAM and server DRAM become high growing products. It is a big challenge to have same or better quality, especially...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17144018198754452846 |