Experimental Studies of High-Concentration Phosphorus Diffusion in Silicon
博士 === 長庚大學 === 電子工程學系 === 100 === Phosphorus doping provides more carriers due to its higher solid solubility in silicon. However, phosphorus suffers from its high diffusivity during formation of shallow junctions. Phosphorus doping by ion implantation generates point defects leading to transient e...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70706281395911738393 |