Improvement of Film Thickness of the Hole Blocking Layer and Hole Injection Layer in OLED
碩士 === 建國科技大學 === 電子工程系暨研究所 === 100 === We improved the OLED structure of ITO/m-MTDATA/NPB/Alq3/BPhen/LiF/Al by using film thinkness adjustment. After multiple rounds of improvement, the best thicknesses for m-MTDATA and BPhen in this structure were established to be 20 nm and 60 nm, respectively. T...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44491649750025387687 |