Investigation of CdS Thin Film for Application of Nonvolatile Resistance Random Access Memories
碩士 === 逢甲大學 === 電子工程所 === 100 === As the flash memory evolving towards 1x-nm generation, the limitation of fabrication process and physical scalability will be faced. In the next-generation nonvolatile memories, resistive random access memory (ReRAM) stands out from all of its competitors due to its...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58017666275134360501 |