Dependence of Process Pressure and Power in Microwave Hydrogen / Nitrogen Plasma Annealing on Electrical, Optical and Microstructure Properties of Gallium and Aluminum Co-doped Zinc Oxide Film
碩士 === 崑山科技大學 === 電機工程研究所 === 100 === This work describes gallium and aluminum doped zinc oxide (GAZO) films with unheated substrate during sputtering were post treated microwave hydrogen/nitrogen plasma annealing with different microwave powers of 200 W、400 W、600 W, and different microwave process...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34447125162497057756 |