Stress Analysis and Carrier Mobility Calculation of InGaAs MOSFETs
碩士 === 國立中興大學 === 光電工程研究所 === 100 === III-V materials will be the potential candidates to replace Si in the future CMOS technology. Recently, the strained InGaAs n-MOSFET with S/D Stressors was demonstrated for the first time. In this thesis, we will study the performance of strained InGaAs MOSF...
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64188341269041010788 |