A Study of Sheet Resistance Uniformity in Ion-Implanted 12 inch Si Shallow Junction
碩士 === 國立中興大學 === 材料科學與工程學系所 === 100 === With the progress of semiconductor fabrication processes, the device size is getting smaller and circuit layout becomes more complicated. Nevertheless, the current channel of MOSFET is shortened with the shrinking of device size, which will lead to the proble...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/01779653890634569628 |