InGaN-Based Light Emitting Diodes with Roughened Structure and Their Optoelectronic Properties
博士 === 國立中興大學 === 材料科學與工程學系所 === 100 === In this thesis, high efficiency InGaN-based light emitting diodes (LEDs) were fabricated and optical analysed through the photoelectrochemical (PEC) oxidation and crystallographic wet etching technique. The Ga2O3 layer formed at the mesa sidewall and the bott...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/s5b5a8 |