Characteristics of Device Dimension and Reliability Degradation of FinFET Device
碩士 === 國立中興大學 === 電機工程學系所 === 100 === This thesis investigates the electrical characteristic of FinFET device with different channel length and fin width, and the inversion carrier distribution inside the fin-shaped silicon. The hot carrier effect (HCE), negative bias temperature instability (NBTI...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85173715660011887677 |