Study of Low Resistance on Thin Diffusion Barrier Layer in Advanced Cu Metallization
博士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 100 === When copper interconnect began to be mass produced in the semiconductor industry, Tantalum or Tantalum compounds has been widely applied as the most important diffusion barrier layer candidate in Copper interconnect. After several technological generations...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19220682788172054192 |