Growth of 3C-SiC films on Si substrates by Vapor-Liquid-Solid tri-phase epitaxy

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 100 === Epitaxial 3C-SiC films grown on the Si substrates are highly desired in the high-power high-frequency integrated circuits and as the substrates for the growth of LEDs. Physical vapor transport and chemical vapor deposition are the two methods most ofte...

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Bibliographic Details
Main Authors: Yu-LingLiang, 梁育綾
Other Authors: Xiao-Ding Qi
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/01878051465746412357