Effects of Low Hydrogen Content in the Fabrication of Amorphous Indium-Gallium-Zinc-Oxide Thin-film Transistors
碩士 === 國立成功大學 === 電機工程學系專班 === 100 === Amorphous IGZO-based thin film transistors(TFTs) with a low hydrogen content silicon oxide (SiOx) as gate insulator layer are demonstrated. The IGZO film processed in this study are amorphous crystalline revealed by X-ray diffraction measurements and exhibit ov...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12979213547717232911 |