GaN-Based Light Emitting Diode with Sputtered AlN Nucleation Layer
碩士 === 國立成功大學 === 電機工程學系專班 === 100 === In this paper, we grew aluminum nitride (AlN) nucleation layer on the patterned sapphire substrates (PSS) using sputter and metal-organic chemical vapor deposition (MOCVD), respectively. We also analyze the crystal qualities of the LEDs with different growth mo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90855479829360887840 |