Confined Resistive Switching in a Focus Ion Beam recessed nanopore of TiO2 Dielectrics Resistive Random Access Memory

碩士 === 國立成功大學 === 電機工程學系專班 === 100 === The present thesis is devoted to the study of the conduction behavior of a resistive random access memory (RRAM) confined within a nanometer-sized pore (nanopore) recessed by focus ion beam (FIB). TiO2 high-k dielectric which is one of the most popular transi...

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Bibliographic Details
Main Authors: Chia-JungHsieh, 謝嘉榮
Other Authors: Shui-Jinn Wang
Format: Others
Language:zh-TW
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/72753593361353905324