Investigation of CuMn alloy in copper metallization process
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 100 === In this study, the characteristics of CuMn alloy films and their applications as the diffusion barrier/Cu seed layer for interconnect in IC are explored. Using CuMn as the barrier layer could reduce the thickness, because it could act as the barrier layer...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47635966121957920535 |