The characteristics of AlN films for random resistive access memory application
碩士 === 國立成功大學 === 奈米科技暨微系統工程研究所 === 100 === AlN thin films were deposited on Pt/Ti/SiO2/Si using radio-frequency magnetron sputtering technique and were followed by four different top electrodes (aluminum, silver, titanium, platinum) to evaluate the dependence of the resistive switching characterist...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30174454432663195206 |