Electrical Properties and Reliability of HfO2 Film with Different Precursors
碩士 === 國立暨南國際大學 === 電機工程學系 === 100 === In this thesis, three different experiments were used to study the physical properties, electrical characteristics, and reliability performance of high-k dielectric hafnium oxide (HfO2) deposited using atomic layer deposition method. The experimental topics are...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02135726819582330977 |