Investigation of GaN-based Light-Emitting Diodes with AlN Film
碩士 === 國立交通大學 === 光電系統研究所 === 100 === In this study, we examined the characteristics for the application of AIN thin films on GaN light-emitting diode (LED) devices. The devices structure contained a current blocking layer (CBL) and a passivation layer. We also compared the differences in optica...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27295777091457059486 |