Characteristics of Doped-Chalcogenides and Its Nanocomposite Thin Films Applied to Phase-change Random Access Memory

博士 === 國立交通大學 === 材料科學與工程學系 === 100 === Phase-change random access memory (PRAM) has been widely recognized as the next-generation electronic data storage media. In this study, a self-assembly in-situ electrical property measurement system and dynamic/static I–V measurement system were adopted t...

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Bibliographic Details
Main Authors: Huang, Yu-Jen, 黃郁仁
Other Authors: Hsieh, Tung-Eong
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/06855262275044889682