Characteristics of Doped-Chalcogenides and Its Nanocomposite Thin Films Applied to Phase-change Random Access Memory
博士 === 國立交通大學 === 材料科學與工程學系 === 100 === Phase-change random access memory (PRAM) has been widely recognized as the next-generation electronic data storage media. In this study, a self-assembly in-situ electrical property measurement system and dynamic/static I–V measurement system were adopted t...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2011
|
Online Access: | http://ndltd.ncl.edu.tw/handle/06855262275044889682 |