Study of AlGaN/GaN MOS-HEMTs on Silicon Substrate with Al2O3 Gate Insulator for Device Linearity Improvement
碩士 === 國立交通大學 === 材料科學與工程學系 === 100 === Superior properties of AlGaN/GaN HEMTs are promising contenders for high-power, high-temperature, high-breakdown, and high-frequency applications and have attracted much attention recently. However, one of the key issues for using AlGaN/GaN HEMTs for high-powe...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28449242618714301805 |