Application of Silicon Nanowire P-I-N Diode in Biosensing

碩士 === 國立交通大學 === 材料科學與工程學系奈米科技碩博士班 === 100 === In this thesis, silicon nanowire P-I-N diode array with width of ca. 110 nm and thickness of 45 nm was successfully fabricated using e-beam lithography for biosensing applications. The characteristics of silicon nanowire P-I-N diode has been characteri...

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Bibliographic Details
Main Authors: Lee, Cheng-Hua, 李承樺
Other Authors: Sheu, Jeng-Tzong
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/90556459063236839200